Topic: Direct Conversion HR GaAs: Cr Pixel Sensors for Spectral X-ray Imaging
Speaker: Anton V. Tyazhev, Head of Ionizing radiation detector laboratory, Tomsk State University (Tomsk U)
Date and time: 10:30–11:30, December 6
Venue: 105, #5 building of SPST
Tencent Meeting ID: 134 539 137
Abstract:
The report presents the results of R&D in the field of X-ray pixel sensors and spectral Xray imaging detectors based on chromium compensated gallium arsenide (HR GaAs: Cr), carried out by the R&D Center “Advanced Electronic Technologies” of Tomsk State University.
It is shown that of HR GaAs: Cr X-ray pixel sensors operating in the photon counting mode is promising candidate for spectral X-ray imaging systems having of spatial resolution up to 30 µm and an energy resolution about 4 keV within 10–60 keV energy range at room temperature. It has been experimentally established that HR GaAs: Cr X-ray pixel sensors are characterized by radiation hardness about 1.5 MGy at 8–20 MeV beta particle irradiation and more than 1 MGy when irradiated with 12 keV quanta. Feasibility of spectral X-ray detector application for contrast-enhanced spectral mammography (CESM) as well as for spectral X-ray imaging will also be discussed.
Biography:
Anton V. Tyazhev is the head of Ionizing radiation detector laboratory of “Advanced Electronic Technologies” R&D Center, Tomsk State University, Tomsk, Russian Federation. His team is well-known for leading the efforts of developing various semiconductor detectors and is the first one to demonstrate that Cr compensating process can significantly improve the stability of GaAs detector, paving its way for x-ray imaging.