[SIST Seminar] Research on wide bandgap semiconductor power devices and driving protection circuits

Topic: Research on wide bandgap semiconductor power devices and driving protection circuits

Speaker: Professor CHENG Xinhong, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (SIMIT)

Date and time: 15:00–16:30, January 26

Venue: SIST 1A-200

Host: WANGHaoyu

Abstract:

Wide  bandgap semiconductor power devices, such as SiC MOSFETs and GaN HEMTs, offer superior properties that benefit the  development of power converter modules, leading to higher power density, improved efficiency, and reduced volume. However, the dynamic reliability and  robustness of these devices remain challenging due to their high switching speeds  and power density. To address these issues, the device architecture is being optimized to enhance dynamic performance, including short-circuit (SC)  and unclamped inductive switching (UIS) capacities. Additionally, the  technology of monitoring and protection circuits for overcurrent, short-circuit, and  junction temperature detecting is explored and developed.

Biography:

Professor  CHENG Xinhong earned her bachelor’s degree in Physics from Jilin University in 1992,  master’s degree in Materials Science from the Metal Institute of the  Chinese Academy of Sciences (CAS) in 1997, and PhD degree in Microelectronics  from the Shanghai Institute of Microsystem and Information Technology (SIMIT) of  CAS in 2005. She is currently serving as a professor at SIMIT.

Professor CHENG and her team have successfully developed the 600V SOI LDMOS process, which was transferred to the semiconductor fabrication factory to establish the SOI HV process. Currently, her research focuses on GaN HEMTs and SiC MOSFETs, with particular attention to device architecture optimization, dynamic performance analysis, detection and protection circuits and gate driver circuits development, and power converter design.